1 publication date: march 2003 sjh00081aed transistors with built-in resistor parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 50 v collector current i c ? 80 ma total power dissipation p t 100 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c UNRF1AN silicon pnp epitaxial planar transistor for digital circuits features ? suitable for high-density mounting and downsizing of the equip- ment for ultraminiature leadless package 0.6 mm 1.0 mm (height 0.39 mm) absolute maximum ratings t a = 25 c 1: base 2: emitter 3: collector ml3-n2 package unit: mm internal connection marking symbol: 3k parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 0.5 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 0.2 ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 5 ma 80 400 ? collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v output voltage high level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v output voltage low level v ol v cc = ? 5 v, v b = ? 2.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 4.7 + 30% k ? resistance ratio r 1 / r 2 0.1 ? transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz electrical characteristics t a = 25 c 3 c 0.60 0.05 1.00 0.05 2 1 3 0.39 +0.01 ? 0.03 0.25 0.05 0.25 0.05 0.50 0.05 0.65 0.01 0.15 0.05 2 1 0.35 0.01 0.05 0.03 0.05 0.03 3 b r 1 (4.7 k ?) r 2 (47 k ?) c e note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
UNRF1AN 2 sjh00080aed h fe ? i c c ob ? v cb i o ? v in p t ? t a i c ? v ce v ce(sat) ? i c v in ? i o 0 80 120 40 0 120 100 80 60 40 20 total power dissipation p t (mw) ambient temperature t a ( c) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 80 ? 60 ? 40 ? 20 i b = ? 1.0 ma ? 0. 9 ma ? 0. 8 ma ? 0. 7 ma ? 0. 6 ma ? 0. 5 ma ? 0. 4 ma ? 0. 3 ma ? 0. 2 ma ? 0. 1 ma t a = 25 c collector current i c (ma) collector-emitter voltage v ce (v) ? 1 ? 10 ? 100 ? 1 000 ? 0.01 ? 100 ? 10 ? 1 ? 0.1 t a = 85 c 25 c ? 25 c i c / i b = 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) ? 1 ? 10 ? 1 000 ? 100 0 250 100 50 200 150 t a = 85 c ? 25 c 25 c v ce = ?10 v forward current transfer ratio h fe collector current i c (ma) 0 ? 40 ? 10 ? 30 ? 20 1 10 f = 1 mhz t a = 25 c collector-base voltage v cb (v) collector output capacitance (common base, input open circuited) c ob (pf) 0 ? 2.5 ? 2.0 ? 0.5 ? 1.5 ? 1.0 ? 1 ? 100 ? 10 v o = ? 5 v t a = 25 c input voltage v in (v) output current i o (ma) ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 10 ? 1 v o = ? 0.2 v t a = 25 c output current i o (ma) input voltage v in (v)
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